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| SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -40 40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) -60c -48 rDS(on) (W) 0.013 @ VGS = -10 V 0.022 @ VGS = -4.5 V APPLICATIONS D Automotive Such As: - High-Side Switch - Motor Drive - 12-V Boardnet TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Order Number: SUD50P04-13L--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit -40 "20 -60c -43 -100 -60c -40 80 93.7b 3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case t v 10 sec. Steady State Symbol RthJA RthJC Typical 15 40 1.3 Maximum 18 50 1.6 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. c. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 73009 S-41267--Rev. A, 05-Jul-04 www.vishay.com 1 SUD50P04-13L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -4.5 V, ID = -20 A VDS = -15 V, ID = -30 A 15 0.017 -50 0.0105 0.013 0.020 0.022 S W -40 -1.0 -3.0 "100 -1 -50 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr Timec td(off) tf VDD = -20 V, RL = 0.4 W ID ^ -50 A, VGEN = -10 V, Rg = 2.5 W VDS = -20 V, VGS = -10 V, ID = -50 A , , f = 1.0 MHz VGS = 0 V, VDS = -25 V, f = 1 MHz , , 3120 440 320 4.3 63 13 16 15 18 60 47 25 30 90 70 ns 95 nC W pF Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltagea ISM VSD trr IF = -50 A, VGS = 0 V IF = -50 A, di/dt = 100 A/ms -1.0 36 -100 -1.5 55 A V ns Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73009 S-41267--Rev. A, 05-Jul-04 SUD50P04-13L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 100 Vishay Siliconix Transfer Characteristics 60 4V 40 60 40 TC = 125_C 20 25_C -55_C 20 2V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Gate-to-Source Voltage (V) Transconductance 80 r DS(on) - On-Resistance ( ) 70 g fs - Transconductance (S) 60 50 40 30 20 10 0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) 5000 4500 4000 C - Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Crss 0 0 8 Coss Ciss V GS - Gate-to-Source Voltage (V) 8 0.00 0 125_C 25_C TC = -55_C 0.04 0.05 On-Resistance vs. Drain Current 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 20 40 60 80 100 ID - Drain Current (A) 10 VDS = 20 V ID = 50 A Capacitance Gate Charge 6 4 2 16 24 32 40 48 56 64 Qg - Total Gate Charge (nC) Document Number: 73009 S-41267--Rev. A, 05-Jul-04 www.vishay.com 3 SUD50P04-13L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage 100 TJ = 150_C TJ = 25_C 10 -25 0 25 50 75 100 125 150 175 1 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 75 Safe Operating Area 200 100 Limited by rDS(on) 10 ms 100 ms I D - Drain Current (A) 60 I D - Drain Current (A) 45 Limited By Package 30 10 1 ms 10 ms 1 TC = 25_C Single Pulse 0.1 100 ms dc 15 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1K Square Wave Pulse Duration (sec) www.vishay.com Document Number: 73009 S-41267--Rev. A, 05-Jul-04 4 SUD50P04-13L New Product THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 1 00 Document Number: 73009 S-41267--Rev. A, 05-Jul-04 www.vishay.com 5 |
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